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TSM7NC60CF Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Nome de Peças TSM7NC60CF
Descrição Electrónicos  Advanced planar process
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Fabricante Electrônico  TSC [Taiwan Semiconductor Company, Ltd]
Página de início  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM7NC60CF Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM7NC60CF
Taiwan Semiconductor
1
Version: A1605
N-Channel Power MOSFET
600V, 7A, 1.2
Ω
FEATURES
● 100% UIS and R
g tested
● Advanced planar process
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● AC/DC LED Lighting
● Power Supply
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
600
V
RDS(on) (max)
1.2
Ω
Qg
24
nC
ITO-220S
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Limit
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
(Note 1)
TC = 25°C
ID
7
A
TC = 100°C
4.4
Pulsed Drain Current
(Note 2)
IDM
21
A
Total Power Dissipation @ TC = 25°C
PDTOT
44.6
W
Single Pulse Avalanche Energy
(Note 3)
EAS
270
mJ
Single Pulse Avalanche Current
(Note 3)
IAS
5.2
A
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
Limit
UNIT
Junction to Case Thermal Resistance
RӨJC
2.8
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air.


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