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TSM120NA03CR Folha de dados(PDF) 4 Page - Taiwan Semiconductor Company, Ltd

Nome de Peças TSM120NA03CR
Descrição Electrónicos  Low gate charge for fast power switching
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Fabricante Electrônico  TSC [Taiwan Semiconductor Company, Ltd]
Página de início  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM120NA03CR Folha de dados(HTML) 4 Page - Taiwan Semiconductor Company, Ltd

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TSM120NA03CR
Taiwan Semiconductor
4
Version: B1610
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BVDSS vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
t, Square Wave Pulse Duration (sec)
VDS, Drain to Source Voltage (V)
TJ, Junction Temperature (°C)
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
25℃
150℃
-55℃
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75
-50
-25
0
25
50
75
100 125
150
I
D=1mA
1
10
100
0.1
1
10
100
V
DS, Drain to Source Voltage (V)
R
DS(ON)
SINGLE PULSE
RӨJC=3.8°C/W
T
C=25°C
200
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
SINGLE PULSE
RӨJC=3.8°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
VSD, Body Diode Forward Voltage (V)
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC x RӨJC


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