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CY7C1441KV33 Folha de dados(PDF) 19 Page - Cypress Semiconductor |
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CY7C1441KV33 Folha de dados(HTML) 19 Page - Cypress Semiconductor |
19 / 32 page CY7C1441KV33 CY7C1443KV33 CY7C1441KVE33 Document Number: 001-66677 Rev. *I Page 19 of 32 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage Temperature ............................... –65 C to +150C Ambient Temperature with Power Applied .................................. –55 C to +125 C Supply Voltage on VDD Relative to GND .....–0.3 V to +4.6 V Supply Voltage on VDDQ Relative to GND .... –0.3 V to +VDD DC Voltage Applied to Outputs in Tristate ..........................................–0.5 V to VDDQ + 0.5 V DC Input Voltage ................................ –0.5 V to VDD + 0.5 V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage (per MIL-STD-883, Method 3015) ......................... > 2001 V Latch-up Current ................................................... > 200 mA DC Input Voltage ................................ –0.5 V to VDD + 0.5 V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage (per MIL-STD-883, Method 3015) ......................... > 2001 V Latch-up Current ................................................... > 200 mA Operating Range Range Ambient Temperature VDD VDDQ Commercial 0 °C to +70 °C 3.3 V – 5% / + 10% 2.5 V – 5% to VDD Industrial –40 °C to +85 °C Neutron Soft Error Immunity Parameter Description Test Conditions Typ Max* Unit LSBU (Device without ECC) Logical Single-Bit Upsets 25 °C <5 5 FIT/ Mb LSBU (Device with ECC) 00.01 FIT/ Mb LMBU (All Devices) Logical Multi-Bit Upsets 25 °C 0 0.01 FIT/ Mb SEL (All Devices) Single Event Latch up 85 °C 0 0.1 FIT/ Dev * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note AN54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates”. Electrical Characteristics Over the Operating Range DC Characteristics Over the Operating Range Parameter Description Test Conditions Min Max Units VDD Power supply voltage – 3.135 3.6 V VDDQ I/O supply voltage for 3.3 V I/O 3.135 VDD V for 2.5 V I/O 2.375 2.625 V VOH Output HIGH voltage for 3.3 V I/O, IOH = -4.0 mA 2.4 – V for 2.5 V I/O, IOH = -1.0 mA 2.0 – V VOL Output LOW voltage for 3.3 V I/O, IOL = 8.0 mA – 0.4 V for 2.5 V I/O, IOL = 1.0 mA – 0.4 V VIH Input HIGH voltage[15] for 3.3 V I/O 2.0 VDD + 0.3 V V for 2.5 V I/O 1.7 VDD + 0.3 V V VIL Input LOW voltage[15] for 3.3 V I/O -0.3 0.8 V for 2.5 V I/O -0.3 0.7 V Notes 15. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2). 16. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. |
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