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BTS7020-2EPA Folha de dados(PDF) 21 Page - Infineon Technologies AG |
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BTS7020-2EPA Folha de dados(HTML) 21 Page - Infineon Technologies AG |
21 / 58 page Data Sheet 21 Rev. 1.00 2017-08-24 BTS7020-2EPA PROFETTM+2 Power Stages 7 Power Stages The high-side power stages are built using a N-channel vertical Power MOSFET with charge pump. 7.1 Output ON-State Resistance The ON-state resistance RDS(ON) depends mainly on junction temperature TJ. Figure 15 shows the variation of RDS(ON) across the whole TJ range. The value “2” on the y-axis corresponds to the maximum RDS(ON) measured at TJ = 150 °C. Figure 15 RDS(ON) variation factor The behavior in Reverse Polarity is described in Chapter 8.4.1. 7.2 Switching loads 7.2.1 Switching Resistive Loads When switching resistive loads, the switching times and slew rates shown in Figure 16 can be considered. The switch energy values EON and EOFF are proportional to load resistance and times tON and tOFF. 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 -40 -30 -20 -10 0 102030405060708090 100 110 120 130 140 150 160 Junction Temperature (°C) R DS(ON) variation over TJ Typical Reference value: "2" = R DS(ON),MAX @ 150 °C |
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