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NE461M02 Folha de dados(PDF) 1 Page - NEC

Nome de Peças NE461M02
Descrição Electrónicos  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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Fabricante Electrônico  NEC [NEC]
Página de início  http://www.nec.com/
Logo NEC - NEC

NE461M02 Folha de dados(HTML) 1 Page - NEC

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PART NUMBER
NE461M02
EIAJ1 REGISTERED NUMBER
2SC5337
PACKAGE OUTLINE
M02
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 20 V, IE = 0
µA
0.01
5.0
IEBO
Emitter Cutoff Current at VEB = 2 V, IC = 0
µA
0.03
5.0
hFE2
DC Current Gain at VCE = 10 V, IC = 50 mA
40
120
200
|S21E|2
Insertion Power Gain at VCE = 10 V, IC = 50 mA, f = 1 GHz
dB
7.0
8.3
NF1
Noise Figure 1 at VCE = 10 V, IC = 50 mA, f = 500 MHz3
dB
1.5
3.5
NF2
Noise Figure 2 at VCE = 10 V, IC = 50 mA, f = 1 GHz3
dB
2.0
3.5
IM2
2nd Order Intermodulation Distortion
dB
59.0
VCE = 10 V, IC = 50 mA, Rs = RL = 75
Pin = 105 dB
µV/75 Ω, f1 = 190 MHz
f2 = 90 MHz, f = f1 - f2
IM3
3rd Order Intermodulation Distortion
dB
82.0
VCE = 10 V, IC = 50 mA, Rs = RL = 75
Pin = 105 dB
µV/75 Ω, f1 = 190 MHz
f2 = 200 MHz, f = 2 x f1 - f2
NE461M02
NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
HIGH COLLECTOR CURRENT:
250 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
HIGH IP3:
37 dBm TYP at 1 GHz
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 µs, duty cycle ≤ 2 %.
3. Rs = RL = 50
Ω, tuned.
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
BOTTOM VIEW
1.6
±0.2
1.5
±0.1
0.25
±0.02
0.42
±0.06
1.5
0.42
±0.06
0.45
±0.06
C
EB
E
4.5
±0.1
3.0
California Eastern Laboratories


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