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NTE858M Datasheet(Folha de dados) 2 Page - NTE Electronics

Nome de Peças. NTE858M
descrição  Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier
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Fbricantes  NTE [NTE Electronics]
Página de início  http://www.nteinc.com
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Electrical Characteristics: (VCC = +15V, VEE = –15V, TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
VIO
RS ≤ 10k,
3
10
mV
VCM = 0
TA = 0 to +70°C
13
mV
Average Temperature
Coefficient of Input Offset
Voltage
∆VIO/∆T TA = 0 to +70°C
10
µV/°C
Input Offset Current
IIO
VCM = 0,
5
50
pA
Note 3
TA = 0 to +70°C
2
nA
Input Bias Current
IIB
VCM = 0,
30
200
pA
Note 3
TA = 0 to +70°C
7
nA
Input Resistance
ri
1012
Common Mode Input Voltage
Range
VICR
±10 +15, –12
V
Large–Signal Voltage Gain
AVOL
VO = ±10V,
25
150
V/mV
RL ≤ 2k
TA = 0 to +70°C
15
V/mV
Output Voltage Swing
VO
RL = 10k
24
28
V
(Peak–to–Peak)
RL ≥ 10k
TA = 0 to +70°C
24
V
RL ≥ 2k
20
V
Common Mode Rejection Ratio
CMRR
RS ≤ 10k
70
100
dB
Supply Voltage Rejection Ratio
PSRR
RS ≤ 10k
70
100
dB
Supply Current (Each Amplifier)
ID
1.4
2.5
mA
Unity Gain Bandwidth
BW
4
MHz
Slew Rate
SR
VIN = 10V, RL = 2k, CL = 100pF
13
V/
µs
Rise Time
tr
0.1
µs
Overshoot Factor
VIN = 20mV, RL = 2k,
CL = 100pF
10
%
Equivalent Input Noise Voltage
en
RS = 100Ω, f = 1000Hz
18
nV/
√Hz
Equivalent Input Noise Current
in
RS = 100Ω, f = 1000Hz
0.01
pA/
√Hz
Total Harmonic Distortion
THD
VO(RMS) = 10V, RS ≤ 1k,
RL ≥ 2k, f = 1000Hz
0.01
%
Channel Separation
AV = 100
120
dB
Note 3. Input Bias currents of JFET input operational amplifiers approximately double for every 10
°C
rise in Junction Temperature. To maintain Junction Temperature as close to Ambient Tem-
perature as possible, pulse techniques must be used during test.




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