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FQP45N15V2 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FQP45N15V2
Descrição Electrónicos  150V N-Channel MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQP45N15V2 Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
QFET®
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP45N15V2
FQPF45N15V2
Units
VDSS
Drain-Source Voltage
150
V
ID
Drain Current
- Continuous (TC = 25°C)
45
45 *
A
- Continuous (TC = 100°C)
31
31 *
A
IDM
Drain Current
- Pulsed
(Note 1)
180
180 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1124
mJ
IAR
Avalanche Current
(Note 1)
45
A
EAR
Repetitive Avalanche Energy
(Note 1)
22
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
220
66
W
- Derate above 25°C
1.47
0.44
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP45N15V2
FQPF45N15V2
Units
RθJC
Thermal Resistance, Junction-to-Case
0.68
2.25
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP
G
S
D
TO-220F
FQPF
G
S
D
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