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PHB191NQ06LT Folha de dados(PDF) 3 Page - NXP Semiconductors |
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3 / 13 page Philips Semiconductors PHP/PHB191NQ06LT N-channel TrenchMOS™ logic level FET Product data Rev. 01 — 05 May 2004 3 of 13 9397 750 13168 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM is single pulse; VGS =10V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 0 40 80 120 0 50 100 150 200 Tmb ( °C) Pder (%) 03aq99 0 40 80 120 0 50 100 150 200 Tmb (°C) Ider (%) P der P tot P tot 25 C ° () ----------------------- 100% × = I der I D I D25 C ° () ------------------- 100% × = 03ar01 1 10 102 103 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µs 100 µs |
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