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2SA0720 Folha de dados(PDF) 1 Page - Panasonic Semiconductor

Nome de Peças 2SA0720
Descrição Electrónicos  For low-frequency power amplification and driver amplification Complementary
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Fabricante Electrônico  PANASONIC [Panasonic Semiconductor]
Página de início  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

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Transistors
1
Publication date: January 2003
SJC00002CED
2SA0719, 2SA0720 (2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
■ Features
• Complementary pair with 2SC1317 and 2SC1318
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA0719
VCBO
−30
V
(Emitter open)
2SA0720
−60
Collector-emitter voltage 2SA0719
VCEO
−25
V
(Base open)
2SA0720
−50
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
−500
mA
Peak collector current
ICP
−1A
Collector power dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SA0719
VCBO
IC
= −10 µA, I
E
= 0
−30
V
(Emitter open)
2SA0720
−60
Collector-emitter voltage
2SA0719
VCEO
IC = −10 mA, IB = 0
−25
V
(Base open)
2SA0720
−50
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
Forward current transfer ratio
hFE1 *
VCE
= −10 V, I
C
= −150 mA
85
340
hFE2
VCE = −10 V, IC = −500 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC = −300 mA, IB = −30 mA
− 0.35 − 0.60
V
Base-emitter saturation voltage
VBE(sat)
IC
= −300 mA, I
B
= −30 mA
−1.1
−1.5
V
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.


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