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2SA963 Folha de dados(PDF) 1 Page - Panasonic Semiconductor

Nome de Peças 2SA963
Descrição Electrónicos  For low-frequency power amplification
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Fabricante Electrônico  PANASONIC [Panasonic Semiconductor]
Página de início  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SA963 Folha de dados(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: February 2003
SJD00006BED
2SA0963 (2SA963)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2209
■ Features
• Large collector power dissipation P
C
• Output of 4 W to 5 W can be obtained by a complementary pair with
2SC2209
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126A-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC =
−1 mA, I
E = 0
−50
V
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−40
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
−1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE
= −10 V, I
B
= 0
−100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −5 V, IC = 0
−10
µA
Forward current transfer ratio *
hFE
VCE = −5 V, IC = −1 A
80
220
Collector-emitter saturation voltage
VCE(sat)
IC
= −1.5 A, I
B
= − 0.15 A
−1.0
V
Base-emitter saturation voltage
VBE(sat)
IC = −2 A, IB = − 0.2 A
−1.5
V
Transition frequency
fT
VCB = −5 V, IE = 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB =
−5 V, I
E = 0, f = 1 MHz
70
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−40
V
Emitter-base voltage (Collector open)
VEBO
−5V
Collector current
IC
−1.5
A
Peak collector current
ICP
−3A
Collector power dissipation *
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
hFE
80 to 160
120 to 220
Note) *: TC = 25°C
7.5
+0.5
–0.1
2.9±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.26±0.1
123
120
°


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