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IRF2907ZS Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF2907ZS Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor IRF2907ZS · FEATURES · With To-263(D2PAK) package · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 170 120 A IDM Drain Current-Single Pulsed 680 A PD Total Dissipation @TC=25℃ 330 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.45 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃ /W |
Nº de peça semelhante - IRF2907ZS |
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Descrição semelhante - IRF2907ZS |
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