2

QM2605V

N-Ch and P-Ch Fast Switching MOSFETs

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

20

---

---

V

---

0.024

---

V/℃

Static Drain-Source On-Resistance

2

---

40

48

mΩ

---

45

55

55

65

Gate Threshold Voltage

0.3

0.5

1

V

---

-2.51

---

mV/℃

Drain-Source Leakage Current

---

---

1

uA

---

---

5

Gate-Source Leakage Current

---

---

±100

nA

gfs

Forward Transconductance

---

9

---

S

Gate Resistance

---

1.7

3.4

Ω

Total Gate Charge (4.5V)

---

6.2

8.7

nC

Gate-Source Charge

---

0.36

0.5

Gate-Drain Charge

---

1.56

2.18

Turn-On Delay Time

---

1.4

2.8

ns

Rise Time

---

40

72.0

Turn-Off Delay Time

---

17

34

Fall Time

---

5.6

11.2

Input Capacitance

---

382

534.8

pF

Output Capacitance

---

41

57.4

Reverse Transfer Capacitance

---

33

46.2

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Continuous Source Current

1,4

---

---

3.8

A

Pulsed Source Current

2,4

---

---

15.2

A

Diode Forward Voltage

2

---

---

1.2

V

Reverse Recovery Time

---

5.7

---

nS

Reverse Recovery Charge

---

1.8

---

nC

Note :

1.The data tested by surface mounted on a 1 inch

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150℃ junction temperature

Diode Characteristics