1

Rev A.04 D072715

QM3001V

P-Ch 30V Fast Switching MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-30

V

Gate-Sou

rce Voltage

±20

V

1

-3.9

A

1

-3.1

A

Pulsed Drain Current

2

-20

A

Total Power Dissipation

3

1.1

W

Total Power Dissipation

3

0.73

W

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction-Ambient

1

---

110

℃/W

Thermal Resistance Junction-Case

1

---

70

℃/W

BVDSS

RDSON

ID

-30V

52mΩ

-3.9A

The QM3001V is the highest performance trench

P-ch MOSFETs with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications .

The QM3001V meet the RoHS and Green Product

requirement , with full function reliability approved.

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

TSOP6 Pin Configuration

Product Summary