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QM3015D Folha de dados(PDF) 2 Page - uPI Group Inc. |
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QM3015D Folha de dados(HTML) 2 Page - uPI Group Inc. |
2 / 4 page 2 QM3015D P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.018 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V , ID=-30A --- 8 10.5 m Ω VGS=-4.5V , ID=-15A --- 14 18.5 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 5.04 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 26.4 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-15A --- 33 --- nC Qgs Gate-Source Charge --- 10.7 --- Qgd Gate-Drain Charge --- 12.8 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-15A --- 8 --- ns Tr Rise Time --- 17.8 --- Td(off) Turn-Off Delay Time --- 78.4 --- Tf Fall Time --- 43.6 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 3448 --- pF Coss Output Capacitance --- 508 --- Crss Reverse Transfer Capacitance --- 421 --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=-25V , L=0.1mH , IAS=-30A 120 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- -57 A ISM Pulsed Source Current 2,6 --- --- -180 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-15A , dI/dt=100A/µs , TJ=25℃ --- 29 --- nS Qrr Reverse Recovery Charge --- 15 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55.4A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics |
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Descrição semelhante - QM3015D |
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