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BA1L3M Folha de dados(PDF) 1 Page - NEC

Nome de Peças BA1L3M
Descrição Electrónicos  On-chip resistor NPN Silicon Epitaxial Transistor
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Fabricante Electrônico  NEC [NEC]
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BA1L3M Folha de dados(HTML) 1 Page - NEC

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1998
©
Document No. D16175EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
%$/0
RQFKLSUHVLVWRU131VLOLFRQHSLWD[LDOWUDQVLVWRU
)RUPLGVSHHGVZLWFKLQJ
'$7$ 6+((7
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R = 4.7 k
Ω, R = 4.7 kΩ)
Complementary transistor with BN1L3M
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
20
40
80
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
70
140
Collector saturation voltage
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.08
0.3
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
µA
1.1
0.2
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
3.0
1.5
V
Input resistance
R1
3.29
4.7
6.11
k
Resistance ratio
R1/R2
0.9
1.0
1.1
Turn-on time
ton
0.5
µs
Storage time
tstg
3.0
µs
Turn-off time
toff
VCC = 5 V, RL = 1 k
VI = 5 V, PW = 2
µs
duty cycle
≤2 %
5.0
µs
** PW
≤ 350
µs, duty cycle ≤ 2 %


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