FQD6N50C datasheet(1/9 Pages) FAIRCHILD

Nome de Peças	FQD6N50C

Descrição Electrónicos	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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QFET®

Rev. B, June 2004

FQD6N50C / FQU6N50C

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

• 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V

• Low gate charge (typical 19nC)

• Low Crss (typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

C = 25°C unless otherwise noted

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol

Parameter

FQD6N50C / FQU6N50C

Units

VDSS

Drain-Source Voltage

500

V

ID

Drain Current

- Continuous (TC = 25°C)

4.5

A

- Continuous (TC = 100°C)

2.7

A

IDM

Drain Current

- Pulsed

(Note 1)

18

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

300

mJ

IAR

Avalanche Current

(Note 1)

4.5

A

EAR

Repetitive Avalanche Energy

(Note 1)

6.1

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TA = 25°C)*

2.5

W

Power Dissipation (TC = 25°C)

61

W

- Derate above 25°C

0.49

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

RθJC

Thermal Resistance, Junction-to-Case

-

2.05

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient *

-

50

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

-

110

°C/W

●

▲

!

◀

●

▲

!

◀

S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

GS

D

GS

D

Nº de peça semelhante - FQD6N50C

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Inchange Semiconductor ...	FQD6N50C	305Kb / 2P	isc N-Channel MOSFET Transistor 2023-10-08
Fairchild Semiconductor	FQD6N50CTM	547Kb / 8P	N-Channel QFET MOSFET 500 V, 4.5 A, 1.2
Fairchild Semiconductor	FQD6N50C	762Kb / 9P	500V N-Channel MOSFET

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Descrição semelhante - FQD6N50C

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Fairchild Semiconductor	FDPF10N60NZ	439Kb / 10P	These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.
Shanghai Leiditech Elec...	LM6911	1Mb / 5P	These P-Channel enhancement mode power field effect transistors are using trench DMOS technology
SHIKUES Electronics	SDW3045	1,003Kb / 5P	N-Channel enhancement mode power field effect transistors are using trench DMOS technology
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	STN9926	648Kb / 7P	The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
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