CMOS High Voltage Logic – CD4073B

 

Triple 3-Input AND Gate Logic IC in bare die form

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Die Size (Unsawn)

1450 x 1250

57 x 49

µm

mils

Minimum Bond Pad Size

100 x 100

3.94 x 3.94

µm

mils

Die Thickness

350 (±20)

13.78 (±0.79)

µm

mils

Top Metal Composition

Al 1%Si 1.1µm

Back Metal Composition

N/A – Bare Si

High Input Voltage up to 20V

Drives x2 Low-Power TTL loads or x1 LSTTL load

Symmetrical Sink & Source Currents

All outputs buffered

Direct drop-in replacement for obsolete

Rev 1.0

15/03/18

Features:

Description

The CD4073B Triple 3-Input AND Gate is fabricated

using a 3µm 15CMOS process. This device consists of

three independent circuits providing the system

designer with direct implementation of the AND

function. The device primarily finds use where high

input voltage, low power dissipation and/or high noise

immunity is desired. Inputs are protected against ESD

Ordering Information

Die Dimensions in µm (mils)

1450 (57)

The following part suffixes apply:

No suffix - MIL-STD-883 /2010B Visual Inspection

“H” - MIL-STD-883 /2010B Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-883 /2010A Visual Inspection (Space)

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

Default – Die in Waffle Pack (400 per tray capacity)

Sawn Wafer on Tape – On request

Unsawn Wafer – On request

Die Thickness <> 350µm(14 Mils) – On request

Assembled into Ceramic Package – On request

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