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High Speed Super Low Power SRAM
128K-Word By 8 Bit
CS18LV10245
Rev. 1.2
Copyright 2004 March Chiplus Semiconductor Corp. All rights reserved. .
P 5
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
Parameter
Name
Parameter
Test Conduction
MIN TYP(1) MAX
Unit
VIL
Guaranteed Input Low
Voltage
(2)
-0.5
0.8
V
VIH
Guaranteed Input High
Voltage
(2)
2.0
Vcc+0.2
V
IIL
Input Leakage Current VCC=MAX, VIN=0 to VCC
1
uA
IOL
Output Leakage
Current
VCC=MAX, /CE=VIN, or
/OE=VIN , VIO=0V to VCC
1
uA
VOL
Output Low Voltage
VCC=MAX, IOL = 2mA
0.4
V
VOH
Output High Voltage
VCC=MIN, IOH = -1mA
2.4
V
ICC
Operating Power
Supply Current
/CE=VIL, IDQ=0mA, F=FMAX
(3)
35
mA
ICCSB
Standby Supply - TTL
/CE=VIH, IDQ=0mA,
2
mA
ICCSB1
Standby Current
-CMOS
/CE≧VCC-0.2V, VIN≧
VCC-0.2V or VIN≦0.2V
0.3
10
uA
1. Typical characteristics are at TA = 25
oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester
notice are included.
3. Fmax = 1/t
RC.
DATA RETENTION CHARACTERISTICS ( TA = 0 to +70oC )
Parameter
Name
Parameter
Test Conduction
MIN
TYP(1) MAX Unit
VRD
VCC for Data Retention
/CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
1.5
V
ICCDR
Data Retention Current
/CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
0.2
2.0
uA
TCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
See Retention Waveform
tRC
(2)
ns
1. Vcc = 3.0V, TA = + 25
oC. 2. t
RC= Read Cycle Time.