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MURTA20060 Folha de dados(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Nome de Peças MURTA20060
Descrição Electrónicos  Silicon Super Fast Recovery Diode
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Fabricante Electrônico  GENESIC [GeneSiC Semiconductor, Inc.]
Página de início  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MURTA20060 Folha de dados(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  MURTA20060_18 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. MURTA20060_18 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. MURTA20060_18 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc. MURTA20060_18 Datasheet HTML 4Page - GeneSiC Semiconductor, Inc.  
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VRRM = 600 V - 1200 V
IF(AV) = 200 A
Features
• High Surge Capability
Heavy Three Tower Package
• Types from 600 V to 1200 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter
Symbol
MURTA20060(R)
Unit
Repetitive peak reverse voltage
VRRM
600
V
RMS reverse voltage
VRMS
424
V
DC blocking voltage
VDC
600
V
Operating temperature
Tj
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
°C
Parameter
Symbol
MURTA20060(R)
Unit
Average forward current (per pkg)
IF(AV)
200
A
Peak forward surge current (per leg)
IFSM
2000
A
Maximum instantaneous forward
voltage (per leg)
1.7
25
μA
5
mA
Maximum reverse recovery time (per
leg)
Trr
110
ns
Thermal characteristics
Maximum thermal resistance, junction -
case
(per leg)
RΘJC
0.45
°C/W
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
25
5
150
MURTA200120(R)
1200
---
1200
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
MURTA200120(R)
TC = 100 °C
200
tp = 8.3 ms, half sine
2000
VF
2.6
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
Tj = 25 °C
V
0.45
MURTA20060 thru MURTA200120R
Tj = 125 °C
IFM = 100 A, Tj = 25 °C
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Super Fast
Recovery Diode
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murta20060.pdf


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