1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

BC

237

BC

238

BC

239

Unit

Collector – Emitter Voltage

VCEO

45

25

25

Vdc

Collector – Emitter Voltage

VCES

50

30

30

Vdc

Emitter – Base Voltage

VEBO

6.0

5.0

5.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

BC237

(IC = 2.0 mA, IB = 0)

BC238

BC239

V(BR)CEO

45

25

25

—

—

—

—

—

—

V

Emitter – Base Breakdown Voltage

BC237

(IE = 100 mA, IC = 0)

BC238

BC239

V(BR)EBO

6.0

5.0

5.0

—

—

—

—

—

—

V

Collector Cutoff Current

(VCE = 30 V, VBE = 0)

BC238

BC239

(VCE = 50 V, VBE = 0)

BC237

(VCE = 30 V, VBE = 0) TA = 125°C

BC238

BC239

(VCE = 50 V, VBE = 0) TA = 125°C

BC237

ICES

—

—

—

—

—

—

0.2

0.2

0.2

0.2

0.2

0.2

15

15

15

4.0

4.0

4.0

nA

µA

Order this document

by BC237/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC237,A,B,C

BC238B,C

BC239,C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER

REV 1