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BC368 Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças BC368
Descrição Electrónicos  Amplifier Transistors
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC368 Folha de dados(HTML) 2 Page - ON Semiconductor

  BC368 Datasheet HTML 1Page - ON Semiconductor BC368 Datasheet HTML 2Page - ON Semiconductor BC368 Datasheet HTML 3Page - ON Semiconductor BC368 Datasheet HTML 4Page - ON Semiconductor  
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BC368 (NPN), BC369 (PNP)
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
20
Vdc
Collector − Base Breakdown Voltage
(IC = 100 mA, IE = 0 )
V(BR)CBO
25
Vdc
Emitter − Base Breakdown Voltage
(IE = 100 mA, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO
10
1.0
mAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
BC368, 369
BC368−25
(VCE = 1.0 V, IC = 1.0 A)
hFE
50
85
170
60
375
375
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
fT
65
MHz
Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VCE(sat)
0.5
V
Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
VBE(on)
1.0
V


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