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BCP56T3 Folha de dados(PDF) 1 Page - ON Semiconductor |
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BCP56T3 Folha de dados(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 3 1 Publication Order Number: BCP56T1/D BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel • PNP Complement is BCP53T1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Temperature Range TJ, Tstg − 65 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (surface mounted) RqJA 83.3 °C/W Maximum Temperature for Soldering Purposes Time in Solder Bath TL 260 10 °C Sec 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AWW xxxx Preferred devices are recommended choices for future use and best overall value. COLLECTOR 2,4 BASE 1 EMITTER 3 MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 1 2 3 4 http://onsemi.com xxxx = Specific Device Code A = Assembly Location WW = Work Week See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
Nº de peça semelhante - BCP56T3 |
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Descrição semelhante - BCP56T3 |
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