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BCW72LT1 Folha de dados(PDF) 1 Page - ON Semiconductor |
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BCW72LT1 Folha de dados(HTML) 1 Page - ON Semiconductor |
1 / 8 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg – 55 to +150 °C DEVICE MARKING BCW72LT1 = K2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CEO 45 — — Vdc Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CES 45 — — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 50 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 — — Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100°C) ICBO — — — — 100 10 nAdc mAdc 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Order this document by BCW72LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW72LT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) © Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER |
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