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KFW1G16Q2M-DEB6 Folha de dados(PDF) 8 Page - Samsung semiconductor |
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KFW1G16Q2M-DEB6 Folha de dados(HTML) 8 Page - Samsung semiconductor |
8 / 125 page OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY 8 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND4G(KFW4G16Q2M-DEB6) OneNAND ™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of ~76ns. The device operates up to a maximum host-driven clock frequency of 66MHz for synchronous reads at Vcc(or Vccq. Refer to chapter 4.2) with minimum 4-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are deter- mined by programmable read latency. OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter register. The device includes one block-sized OTP (One Time Programmable) area that can be used to increase system security or to provide identification capabilities. 1.6 General Overview |
Nº de peça semelhante - KFW1G16Q2M-DEB6 |
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Descrição semelhante - KFW1G16Q2M-DEB6 |
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