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J112 Folha de dados(PDF) 1 Page - ON Semiconductor |
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J112 Folha de dados(HTML) 1 Page - ON Semiconductor |
1 / 4 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data JFET Chopper Transistor N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG –35 Vdc Gate – Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 350 2.8 mW mW/ °C Lead Temperature TL 300 °C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –1.0 µAdc) V(BR)GSS 35 — Vdc Gate Reverse Current (VGS = –15 Vdc) IGSS — – 1.0 nAdc Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 µAdc) VGS(off) – 1.0 – 5.0 Vdc Drain–Cutoff Current (VDS = 5.0 Vdc, VGS = –10 Vdc) ID(off) — 1.0 nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(1) (VDS = 15 Vdc) IDSS 5.0 — mAdc Static Drain–Source On Resistance (VDS = 0.1 Vdc) rDS(on) — 50 Ω Drain Gate and Source Gate On–Capacitance (VDS = VGS = 0, f = 1.0 MHz) Cdg(on) + Csg(on) — 28 pF Drain Gate Off–Capacitance (VGS = –10 Vdc, f = 1.0 MHz) Cdg(off) — 5.0 pF Source Gate Off–Capacitance (VGS = –10 Vdc, f = 1.0 MHz) Csg(off) — 5.0 pF 1. Pulse Width = 300 µs, Duty Cycle = 3.0%. Order this document by J112/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA J112 CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2 3 © Motorola, Inc. 1997 1 DRAIN 2 SOURCE 3 GATE (Replaces J111/D) |
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