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FCPF250N65S3 Datasheet(Folha de dados) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças. FCPF250N65S3
descrição  isc N-Channel MOSFET Transistor
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Fbricantes  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
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isc website:www.iscsemi.cn
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1
isc N-Channel MOSFET Transistor
FCPF250N65S3
·
FEATURES
·
Drain-source on-resistance:
RDS(on) ≤ 250mΩ@10V
·
Fast Switching Speed
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
High fast switching Power Supply
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Pulsed
30
A
PD
Total Dissipation @TC=25℃
31
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
4.03
/W




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