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BYW29EX Folha de dados(PDF) 3 Page - WeEn Semiconductors |
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BYW29EX Folha de dados(HTML) 3 Page - WeEn Semiconductors |
3 / 8 page WeEn Semiconductors Product specification Rectifier diodes BYW29EX series ultrafast, rugged ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V both terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree C isol Capacitance from both terminals f = 1 MHz - 10 - pF to external heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W heatsink without heatsink compound - - 7.2 K/W R th j-a Thermal resistance junction to in free air - 55 - K/W ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 8 A; Tj = 150˚C - 0.80 0.895 V I F = 8 A - 0.92 1.05 V I F = 20 A - 1.1 1.3 V I R Reverse current V R = VRWM; Tj = 100 ˚C - 0.2 0.6 mA V R = VRWM -2 10 µA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Q s Reverse recovery charge I F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC t rr1 Reverse recovery time I F = 1 A; VR ≥ 30 V; - 20 25 ns -dI F/dt = 100 A/µs t rr2 Reverse recovery time I F = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns V fr Forward recovery voltage I F = 1 A; dIF/dt = 10 A/µs- 1 - V September 2018 2 Rev 1. 300 |
Nº de peça semelhante - BYW29EX |
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Descrição semelhante - BYW29EX |
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