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IKW50N60T Folha de dados(PDF) 4 Page - Infineon Technologies AG

Nome de Peças IKW50N60T
Descrição Electrónicos  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW50N60T Folha de dados(HTML) 4 Page - Infineon Technologies AG

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IKW50N60T
TrenchStop Series
q
Power Semiconductors
4
Rev. 2.1 Dec-04
100Hz
1kHz
10kHz
100kHz
0A
20A
40A
60A
80A
100A
120A
140A
T
C=110°C
T
C=80°C
1V
10V
100V
1000V
1A
10A
100A
10µs
1ms
DC
t
p=2µs
50µs
10ms
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj
≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 7
Ω)
Figure 2. Safe operating area
(D = 0, TC = 25
°C, Tj ≤175°C;
VGE=15V)
25°C
50°C
75°C
100°C 125°C 150°C
0W
50W
100W
150W
200W
250W
300W
25°C
75°C
125°C
0A
20A
40A
60A
80A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj
≤ 175°C)
Figure 4. Collector current as a function of
case temperature
(VGE
≥ 15V, Tj ≤ 175°C)
Ic
Ic


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