FQP3N50C datasheet(4/10 Pages) FAIRCHILD

Nome de Peças	FQP3N50C

Descrição Electrónicos	500V N-Channel MOSFET

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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FQP3N50C/FQPF3N50C Rev. A

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9-1. Maximum Safe Operating Area

Figure 9-2. Maximum Safe Operating Area

of FQP3N50C

of FQPF3N50C

Figure10.MaximumDrainCurrent

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

1. V

GS = 0 V

2. I

D = 250µA

T

J, Junction Temperature [°C]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. V

GS = 10 V

2. I

D = 1.5 A

T

J, Junction Temperature [°C]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

DC

10 ms

100 µs

Operation in This Area

is Limited by R

DS(on)

Notes :

1. T

C = 25°C

2. T

J = 150°C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

DC

10 ms

100 µs

Operation in This Area

is Limited by R

DS(on)

Notes :

1. T

C = 25°C

2. T

J = 150°C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0

1

2

3

T

C, Case Temperature [°C]

Nº de peça semelhante - FQP3N50C

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FQP3N50C Folha de dados(PDF) 4 Page - Fairchild Semiconductor

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Nº de peça semelhante - FQP3N50C

Descrição semelhante - FQP3N50C

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