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MC33065DW Folha de dados(PDF) 11 Page - ON Semiconductor |
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MC33065DW Folha de dados(HTML) 11 Page - ON Semiconductor |
11 / 15 page MC34065 MC33065 11 MOTOROLA ANALOG IC DEVICE DATA Figure 21. Adjustable Reduction of Clamp Level with Soft–Start Figure 22. MOSFET Parasitic Oscillations Figure 23. Current Sensing Power MOSFET Figure 24. Current Waveform Spike Suppression – + – + – + Vin VCC 16 + + Q1 RS 6 7 5.0 Vref 20 k Bias R R Vref 15 1 3 2 4 5 MPSA63 R1 R2 C EA1 2R 0.5 V R VClamp PWM Latch 1 S R Q Where: 0 ≤ VClamp ≤ 0.5 V Osc _ _ – + Series gate resistor Rg may be needed to damp high frequency parasitic oscillations caused by the MOSFET input capacitance and any series wiring inductance in the gate–source circuit. Rg will decrease the MOSFET switching speed. Schottky diode D1 is required if circuit ringing drives the output pin below ground. – + – + + – VCC 16 + 5.0 Vref + PWM Latch 1 Q S R 1N5819 Rg Q1 RS 7 6 Vin D1 _ – Virtually lossless current sensing can be achieved with the implementation of a SENSEFET power switch. For proper operation during over current conditions, a reduction of the Ipk(max) clamp level must be implemented. Refer to Figures 19 and 21. + + – S R Q VCC Vin 5.0 Vref PWM Latch 1 7 6 RS 1/4W D S K M G SENSEFET Power Ground to Input Source Return Drive Ground to Pin 9 Control Circuitry Ground to Pin 8 If: SENSEFET = MTP10N10M RS = 200 Then: VPin 6 = 0.075 Ipk + _ _ 16 The addition of the RC filter will eliminate instability caused by the leading edge spike on the current waveform. Vin Q1 RS + – 5.0 Vref S R Q PWM Latch 1 7 6 C R 17 V V Clamp [ 1.67 R2 R1 ) 1 I pk(max) [ V Clamp R S 17 V V Pin 6 [ R S I pk R DS(on) R DM(on) ) R S 17 V 17 V – + + – – + VCC 16 + _ – + – + t Soft–Start + ln 1 1– V C 3V Clamp C R1R2 R1 ) R2 |
Nº de peça semelhante - MC33065DW |
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Descrição semelhante - MC33065DW |
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