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Os motores de busca de Datasheet de Componentes eletrônicos |
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FDD6670AS_NL Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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FDD6670AS_NL Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FDD6670AS Rev A (X) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A 245 mJ IAR Drain-Source Avalanche Current 14 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C 29 mV/ °C VDS = 24 V, VGS = 0 V 500 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V, TJ= 125°C 6.5 mA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.8 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C –3.3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 13.8 A VGS = 4.5 V, ID = 11.7 A VGS= 10 V, ID = 13.8A, TJ= 125°C 6.8 8.3 9.3 8.0 10.4 11.6 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 15 V, ID = 13.8 A 52 S Dynamic Characteristics Ciss Input Capacitance 1580 pF Coss Output Capacitance 440 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 170 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.8 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 28 45 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 20 36 ns td(on) Turn–On Delay Time 15 27 ns tr Turn–On Rise Time 16 29 ns td(off) Turn–Off Delay Time 26 42 ns tf Turn–Off Fall Time VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 13 23 ns Qg(TOT) Total Gate Charge at VGS=10V 29 40 nC Qg(TOT) Total Gate Charge at VGS=5V 16 22 nC Qgs Gate–Source Charge 4.6 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 13.8 A, 5.5 nC Drain–Source Diode Characteristics VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.46 0.59 0.7 V trr Diode Reverse Recovery Time 20 ns Qrr Diode Reverse Recovery Charge IF = 3.5 A, diF/dt = 300 A/µs (Note 3) 15 nC |
Nº de peça semelhante - FDD6670AS_NL |
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Descrição semelhante - FDD6670AS_NL |
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