FDD6030BL datasheet(2/6 Pages) FAIRCHILD

Nome de Peças	FDD6030BL

Descrição Electrónicos	30V N-Channel PowerTrench MOSFET

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Fabricante Electrônico	FAIRCHILD [Fairchild Semiconductor]

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2 / 6 page

FDD6030BL/FDU6030BL Rev. C(W)

Electrical Characteristics

T

A = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain-Source Avalanche Ratings (Note 2)

WDSS

Drain-Source Avalanche Energy

Single Pulse,

VDD = 15 V

130

mJ

IAR

Drain-Source Avalanche Current

10

A

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

µA

30

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250

µA,Referenced to 25°C

22

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

1

µA

IGSSF

Gate–Body Leakage, Forward

VGS = 20 V,

VDS = 0 V

100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = –20 V,

VDS = 0 V

–100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250

µA

1

1.6

3

V

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA, Referenced to 25°C

–4

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 10 A

VGS = 4.5 V,

ID = 8.4 A

VGS = 10 V,

ID = 10 A, TJ=125

°C

12

17

19

16

22

26

m

Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

50

A

gFS

Forward Transconductance

VDS = 10 V,

ID = 10 A

29

S

Dynamic Characteristics

Ciss

Input Capacitance

1143

pF

Coss

Output Capacitance

249

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

107

pF

Switching Characteristics

(Note 2)

td(on)

Turn–On Delay Time

6

12

ns

tr

Turn–On Rise Time

10

18

ns

td(off)

Turn–Off Delay Time

18

29

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

Ω

5

12

ns

Qg

Total Gate Charge

22

31

nC

Qgs

Gate–Source Charge

3

nC

Qgd

Gate–Drain Charge

VDS = 15V,

ID = 10 A,

VGS = 10 V

4

nC

Nº de peça semelhante - FDD6030BL

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Descrição semelhante - FDD6030BL

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