MJ11017 MJ11021 MJ11018 MJ11022

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 0. 1 Adc, IB = 0)

MJ11017, MJ11018

MJ11021, MJ11022

VCEO(sus)

150

250

—

—

Vdc

Collector Cutoff Current

(VCE = 75, IB = 0)

MJ11017, MJ11018

(VCE = 125, IB = 0)

MJ11021, MJ11022

ICEO

—

—

1.0

1.0

mAdc

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)

ICEV

—

—

0.5

5.0

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

2.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

hFE

400

100

15,000

—

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)

(IC = 15 Adc, IB = 150 mA)

VCE(sat)

—

—

2.0

3.4

Vdc

Base–Emitter On Voltage

IC = 10 A, VCE = 5.0 Vdc)

VBE(on)

—

2.8

Vdc

Base–Emitter Saturation Voltage

(IC = 15 Adc, IB = 150 mA)

VBE(sat)

—

3.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain Bandwidth Product

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

[hfe]

3.0

—

Mhz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJ11018, MJ11022

MJ11017, MJ11021

Cob

—

—

400

600

pF

Small–Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

hfe

75

—

—

SWITCHING CHARACTERISTICS

Typical

Characteristic

Symbol

NPN

PNP

Unit

Delay Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

td

150

75

ns

Rise Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

tr

1.2

0.5

µs

Storage Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ts

4.4

2.7

µs

Fall Time

tf

10.0

2.5

µs

(1) Pulsed Test: Pulse Width = 300

µs, Duty Cycle v 2%.

Figure 2. Switching Times Test Circuit

V2

APPROX

+12 V

V1

APPROX

– 8.0 V

0

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

µs

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC

100 V

RC

SCOPE

TUT

RB

D1

51

+ 4.0 V

≈ 10 K

≈ 8.0

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse diode and voltage polarities.