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BAT854CW Folha de dados(PDF) 4 Page - NXP Semiconductors

Nome de Peças BAT854CW
Descrição Electrónicos  Schottky barrier (double) diodes
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAT854CW Folha de dados(HTML) 4 Page - NXP Semiconductors

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2001 Feb 27
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT854W series
GRAPHICAL DATA
handbook, halfpage
1.2
0.8
0.4
0
(1)
(3)
VF (V)
IF
(mA)
103
102
10
1
10−1
MLD546
(2)
Fig.6
Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
handbook, halfpage
40
20
10
0
VR (V)
IR
(
µA)
30
103
102
10
1
10−1
MLD547
(1)
(2)
(3)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
handbook, halfpage
0
VR (V)
Cd
(pF)
10
20
40
20
0
16
30
12
8
4
MLD548
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25 °C.


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