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FDD6N50TF Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FDD6N50TF Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD6N50/FDU6N50 REV. A January 2006 UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) •Low Crss ( typical 9 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. I-PAK FDU Series D-PAK FDD Series GS D GS D D G S Absolute Maximum Ratings Symbol Parameter FDD6N50/FDU6N50 Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 6 3.8 A A IDM Drain Current - Pulsed (Note 1) 24 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 89 0.71 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 1.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 83 °C/W |
Nº de peça semelhante - FDD6N50TF |
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Descrição semelhante - FDD6N50TF |
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