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2N2857 Folha de dados(PDF) 1 Page - M-pulse Microwave Inc.

Nome de Peças 2N2857
Descrição Electrónicos  Silicon Bipolar Low Noise microwave Transistors
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Fabricante Electrônico  MPLUSE [M-pulse Microwave Inc.]
Página de início  http://www.mpulsemw.com
Logo MPLUSE - M-pulse Microwave Inc.

2N2857 Folha de dados(HTML) 1 Page - M-pulse Microwave Inc.

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Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Silicon Bipolar Low Noise
Microwave Transistors
2N2857
Features
• High Gain (19dB Typical @ 450 MHz)
• Low Noise Figure At Low Ic
• Gold Metalization
• Useful To 700 MHz
• Can be Screened to JANTX, JANTXV Equivalent Levels
• Excellent Reliability
Description
Designed especially for low cost, high reliability type
applications, this NPN Silicon Planar Transistor offers
low noise, high gain performance, which meets or
exceeds all JAN specifications. These devices can be
fully tested and screened in accordance with MIL-MRF-
19500 procedures. A 1.8 GHz current gain-bandwidth
product (fT) is typical for this device. The transistors are
rugged
and
employ
gold
metalization
for
an
unprecedented reliability.
Applications
IF, VHF, UHF, TV and RF amplifiers.
Case Style TO-72 CAN (509)


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