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2N2857 Folha de dados(PDF) 1 Page - M-pulse Microwave Inc. |
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2N2857 Folha de dados(HTML) 1 Page - M-pulse Microwave Inc. |
1 / 4 page Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Silicon Bipolar Low Noise Microwave Transistors 2N2857 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels • Excellent Reliability Description Designed especially for low cost, high reliability type applications, this NPN Silicon Planar Transistor offers low noise, high gain performance, which meets or exceeds all JAN specifications. These devices can be fully tested and screened in accordance with MIL-MRF- 19500 procedures. A 1.8 GHz current gain-bandwidth product (fT) is typical for this device. The transistors are rugged and employ gold metalization for an unprecedented reliability. Applications IF, VHF, UHF, TV and RF amplifiers. Case Style TO-72 CAN (509) |
Nº de peça semelhante - 2N2857 |
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Descrição semelhante - 2N2857 |
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