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1PS59SB20 Folha de dados(PDF) 3 Page - NXP Semiconductors |
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1PS59SB20 Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1998 Jul 28 3 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Refer to SC-59 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 500 mA; see Fig.2 − 550 mV IR reverse current VR = 35 V; see Fig.3 − 100 µA VR =35V;Tj = 100 °C; see Fig.3 − 10 mA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.4 60 90 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Nº de peça semelhante - 1PS59SB20 |
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Descrição semelhante - 1PS59SB20 |
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