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1PS89SB15 Folha de dados(PDF) 4 Page - NXP Semiconductors |
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1PS89SB15 Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1998 Nov 10 4 Philips Semiconductors Preliminary specification Schottky barrier double diodes 1PS89SB14; 1PS89SB15; 1PS89SB16 GRAPHICAL DATA handbook, halfpage 10 IF VF (V) 3 10 (mA) 2 10 1 10 1 1.2 0.8 0.4 0 MSA892 (3) (2) (1) (3) (2) (1) (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. Fig.5 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. Fig.6 Reverse current as a function of reverse voltage; typical values. 010 20 30 VR (V) 103 102 10 1 IR ( µA) 10−1 (1) (2) (3) MGL495 Fig.7 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. 010 20 30 0 5 10 15 VR (V) Cd (pF) MGL496 |
Nº de peça semelhante - 1PS89SB15 |
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Descrição semelhante - 1PS89SB15 |
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