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GS78116B-10 Folha de dados(PDF) 4 Page - GSI Technology |
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GS78116B-10 Folha de dados(HTML) 4 Page - GSI Technology |
4 / 11 page Rev: 1.02 9/2001 4/11 © 1999, Giga Semiconductor, Inc. For latest documentation see http://www.gsitechnology.com. GS78116B Notes: 1. Tested at TA = 25°C, f = 1 MHz 2. These parameters are sampled and are not 100% tested. Capacitance Parameter Symbol Test Condition Max Unit Input Capacitance CIN VIN = 0 V 10 pF Output Capacitance COUT VOUT = 0 V 7 pF DC I/O Pin Characteristics Parameter Symbol Test Conditions Min Max Input Leakage Current IIL VIN = 0 to VDD –2 uA 2 uA Output Leakage Current IOL Output High Z, VOUT = 0 to VDD –1 uA 1 uA Output High Voltage VOH IOH = –4 mA 2.4 Output Low Voltage VOL IOL = +4 mA 0.4 V Power Supply Currents Parameter Symbol Test Conditions 0 to 70°C –40 to 85°C 10 ns 12 ns 15 ns 10 ns 12 ns 15 ns Operating Supply Current IDD E ≤ VIL All other inputs ≥ VIH or ≤ VIL Min. cycle time IOUT = 0 mA 225 mA 220 mA 180 mA 270 mA 240 mA 200 mA Standby Current ISB1 E ≥ VIH All other inputs ≥ VIH or ≤VIL Min. cycle time 130 mA 120 mA 110 mA 150 mA 140 mA 130 mA Standby Current ISB2 E ≥ VDD – 0.2V All other inputs ≥ VDD – 0.2 V or ≤ 0.2 V 60 mA 80 mA |
Nº de peça semelhante - GS78116B-10 |
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Descrição semelhante - GS78116B-10 |
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