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GS815018AB-333 Folha de dados(PDF) 11 Page - GSI Technology

Nome de Peças GS815018AB-333
Descrição Electrónicos  1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
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Fabricante Electrônico  GSI [GSI Technology]
Página de início  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS815018AB-333 Folha de dados(HTML) 11 Page - GSI Technology

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AC Electrical Characteristics
Parameter
Symbol
-357
-333
-300
-250
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Clock Cycle Time
tKHKH
2.8
3.0
3.3
4.0
ns
Clock High Time
tKHKL
1.1
1.2
1.3
1.5
ns
Clock Low Time
tKLKH
1.1
1.2
1.3
1.5
ns
Clock High to Output Low-Z
tKHQX1
0.5
0.5
0.5
0.5
ns
1
Clock High to Output Valid
tKHQV
1.4
1.5
1.6
2.0
ns
Clock High to Output Invalid
tKHQX
0.5
0.5
0.5
0.5
ns
Clock High to Output High-Z
tKHQZ
1.4
1.5
1.6
2.0
ns
1
Address Valid to Clock High
tAVKH
0.5
0.6
0.7
0.8
ns
Clock High to Address Don’t Care
tKHAX
0.4
0.4
0.4
0.5
ns
Enable Valid to Clock High
tEVKH
0.5
0.6
0.7
0.8
ns
Clock High to Enable Don’t Care
tKHEX
0.4
0.4
0.4
0.5
ns
Write Valid to Clock High
tWVKH
0.5
0.6
0.7
0.8
ns
Clock High to Write Don’t Care
tKHWX
0.4
0.4
0.4
0.5
ns
Byte Write Valid to Clock High
tBVKH
0.5
0.6
0.7
0.8
ns
Clock High to Byte Write Don’t Care
tKHBX
0.4
0.4
0.4
0.5
ns
Data In Valid to Clock High
tDVKH
0.5
0.5
0.5
0.5
ns
Clock High to Data In Don’t Care
tKHDX
0.4
0.4
0.4
0.5
ns
Output Enable Low to Output Data Valid
tGLQV
1.4
1.5
1.6
2.0
ns
Output Enable Low to Output Data Low-Z
tGLQX
0
0
0
0
ns
Output Enable High to Output Data High-Z
tGHQZ
1.4
1.5
1.6
2.0
ns
Sleep Mode Enable Time
tZZE
15
15
15
15
ns
Sleep Mode Recovery Time
tZZR
20
20
20
20
ns
Notes:
1. Measured at 100 mV from steady state. Not 100% tested.
2. Guaranteed by design. Not 100% tested.
GS815018/36AB-357/333/300/250
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 10/2005
11/25
© 2003, GSI Technology


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