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IRLZ34S Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRLZ34S
Descrição Electrónicos  HEXFET Power MOSFET
Download  10 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLZ34S Folha de dados(HTML) 2 Page - International Rectifier

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IRLZ34S/L
‚ V
DD = 25V, starting TJ = 25°C, L = 290µH
RG = 25Ω, IAS = 30A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRLZ34 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 30A, VGS = 0V
„
trr
Reverse Recovery Time
–––
120
180
ns
TJ = 25°C, IF = 30A
Qrr
Reverse Recovery Charge
–––
700 1300
nC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
30
110
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
Reference to 25°C, ID = 1mA
…
–––
–––
0.05
VGS = 5.0V, ID = 18A
„
–––
–––
0.07
VGS = 4.0V, ID = 15A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
12
–––
–––
S
VDS = 25V, ID = 18A
…
–––
–––
25
µA
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 10V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -10V
Qg
Total Gate Charge
–––
–––
35
ID = 30A
Qgs
Gate-to-Source Charge
–––
–––
7.1
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
25
VGS = 5.0V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 30V
tr
Rise Time
–––
170
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 6.0
tf
Fall Time
–––
56
–––
RD = 1.0Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
1600 –––
VGS = 0V
Coss
Output Capacitance
–––
660
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
170
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
7.5
nH


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