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H01N60SI Folha de dados(PDF) 2 Page - Hi-Sincerity Mocroelectronics |
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H01N60SI Folha de dados(HTML) 2 Page - Hi-Sincerity Mocroelectronics |
2 / 5 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 2/5 H01N60SI, H01N60SJ HSMC Product Specification Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance Junction to Case Max. 4.5 °C/W RθJA Thermal Resistance Junction to Ambient Max. 110 °C/W ELectrical Characteristics (T J=25°C, unless otherwise specified) Symbol Characteristic Min. Typ. Max. Unit • Off Characteristics V DSS Drain-Source Breakdown Voltage (V GS=0V, ID=250uA) 600 - - V ∆BV DSS/∆TJ Breakdown Voltage Temperature Coefficient (I D=250uA, Referenced to 25 oC) -0.6 - V/ oC Zero Gate Voltage Drain Current (V DS=600V, VGS=0V) - - 1 uA I DSS Zero Gate Voltage Drain Current (V DS=480V, Tj=125°C) - - 50 uA I GSSF Gate-Body Leakage Current-Forward (V GS=30V, VDS=0V) - - 100 nA I GSSR Gate-Body Leakage Current-Reverse (V GS=-30V, VDS=0V) - - -100 nA • On Characteristics V GS(th) Gate Threshold Voltage (V DS=VGS, ID=250uA) 2 - 4 V R DS(on) Static Drain-Source On-Resistance (V GS=10V, ID=0.6A) *3 -- 12 Ω g FS Forward Transconductance (V DS=40V, ID=0.5A) *3 -0.75 - S • Dynamic Characteristics C iss Input Capacitance - 210 250 C oss Output Capacitance - 19 25 C rss Reverse Transfer Capacitance V GS=0V, VDS=25V, f=1MHz -4 8 pF • Switching Characteristics t d(on) Turn-on Delay Time - - 30 t r Turn-on Rise Time - - 60 t d(off) Turn-off Delay Time - - 45 t f Turn-off Fall Time V DD=300V, ID=1.1A R G=25Ω *3 -- 75 ns Q g Total Gate Charge - 15 20 Q gs Gate-Source Charge - 4 - Q gd Gate-Drain Charge V DS=480V, ID=1.1A V GS=10V *3 -3 - nC • Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current - - 1 A I SM Maximum Pulsed Drain-Source Diode Forward Current - - 4 A V SD Drain-Source Diode Forward Voltage (V GS=0V, IS=1A) - - 1.4 V t rr Reverse Recovery Time (V GS=0V, IS=1.1A, dlF/dt=100A/us) *3 - 190 - ns Qrr Reverse Recovery Charge (V GS=0V, IS=1.1A, dlF/dt=100A/us) *3 -0.53 - nC *3: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% |
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Descrição semelhante - H01N60SI |
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