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IKP06N60T Folha de dados(PDF) 2 Page - Infineon Technologies AG

Nome de Peças IKP06N60T
Descrição Electrónicos  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IKP06N60T
TrenchStop series
p
Power Semiconductors
2
Rev. 2.2 May 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
1.7
Diode thermal resistance,
junction – case
RthJCD
2.6
Thermal resistance,
junction – ambient
RthJA
62
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V,
IC=0.25mA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=6A
Tj=25°C
Tj=175°C
-
-
1.5
1.8
2.05
Diode forward voltage
VF
VGE=0V, IF=6A
Tj=25°C
Tj=175°C
-
-
1.6
1.6
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC=0.18mA,
VCE=VGE
4.1
4.6
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
-
-
-
-
40
700
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=6A
-
3.6
-
S
Integrated gate resistor
RGint
none
Dynamic Characteristic
Input capacitance
Ciss
-
368
-
Output capacitance
Coss
-
28
-
Reverse transfer capacitance
Crss
VCE=25V,
VGE=0V,
f=1MHz
-
11
-
pF
Gate charge
QGate
VCC=480V, IC=6A
VGE=15V
-
42
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
-
7
-
nH
Short circuit collector current
1)
IC(SC)
VGE=15V,tSC≤5µs
VCC = 400V,
Tj = 25°C
-
55
-
A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.


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