PZT2907A datasheet(2/4 Pages) WEITRON

Nome de Peças	PZT2907A

Descrição Electrónicos	PNP Silicon Planar Epitaxial Transistor

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PZT2907A

ELECTRICALCHARACTERISTICS Continued (TA = 25 C unless otherwise noted)

C harac teris tic

S ymbol

Min

T Y P

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(I C = -100 mAdc, VCE = -10 Vdc)

(I C = -1.0 mAdc, VCE = -10 Vdc)

(I C = -10 mAdc, VCE = -10 Vdc)

(I C = -150 mAdc, VCE = -10 Vdc)

(I C = -500 mAdc, VCE = -10 Vdc)

hFE1

hFE2

hFE3

hFE4

hFE5

75

100

50

-

300

180

-

Collector-Emitter Saturation Voltages

(I C = -150 mAdc, IB= -15 mAdc)

(I C = -500 mAdc, IB= -50 mAdc)

V CE(sat)

-

-0.4

-1.6

-0.2

-0.5

Vdc

Base-Emitter Saturation Voltages

(I C = -150 mAdc, IB= -15 mAdc)

(I C = -500 mAdc, IB= -50 mAdc)

V BE( sat)

-

-1.3

-2.6

Vdc

5

DYNAMIC CHARACTERISTICS

Current-Gain

Bandwidth Product

(I C = -50 mAdc, VCE = -20 Vdc, f = 100 MHz)

fT

200

-

MHz

Output Capacitance

(VCB = -10 Vdc, IE = 0, f = 1.0 MHz)

Cc

-

pF

Input Capacitance

(V EB = -2.0 Vdc, IC = 0, f = 1.0 MHz)

Ce

-

8.0

30

pF

SWITCHINGTIMES (TA = 25 C)

Delay T

Turn-On Time

ime

(V CC = -30 Vdc, IC = -150 mAdc,

I = -15 mAdc)

td

ton

-

10

ns

Rise Time

I B1

tr

-

40

45

Turn-Off Time

Fall Time

2. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%

(V CC = -6.0 Vdc, IC= -150 mAdc,

IB1 = IB2 = -15 mAdc)

toff

-

100

ns

Storage Time

I

= I

ts

tf

-

80

30

_<

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2/4

Rev.A 26-Aug-05

Nº de peça semelhante - PZT2907A

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Motorola, Inc	PZT2907A	139Kb / 6P	SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT
SHENZHEN YONGERJIA INDU...	PZT2907A	161Kb / 1P	TRANSISTOR (PNP)
ON Semiconductor	PZT2907A	139Kb / 6P	PNP SILICON TRANSISTOR SURFACE MOUNT 1996 REV 4
ON Semiconductor	PZT2907A	108Kb / 4P	PNP Silicon Epitaxial Transistor August, 2013 ??Rev. 10
NXP Semiconductors	PZT2907A	46Kb / 8P	PNP switching transistor 1999 Apr 14

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