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FQD16N25CTM Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQD16N25CTM Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQD16N25C Rev. A March 2006 QFET ® FQD16N25C 250V N-Channel MOSFET Features • 16A, 250V, RDS(on) = 0.27Ω @VGS = 10 V • Low gate charge ( typical 41 nC) • Low Crss ( typical 68 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. Absolute Maximum Ratings Thermal Characteristics D G S D-PAK FQD Series Symbol Parameter FQD16N25C Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 16 A - Continuous (TC = 100°C) 10.1 A IDM Drain Current - Pulsed (Note 1) 64 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 432 mJ IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 160 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 160 W - Derate above 25°C 1.28 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQD16N25C Units RθJC Thermal Resistance, Junction-to-Case 0.78 °C/W RθJA Thermal Resistance, Junction-to-Ambient 110 °C/W |
Nº de peça semelhante - FQD16N25CTM |
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Descrição semelhante - FQD16N25CTM |
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