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CD214B-F2100 Folha de dados(PDF) 1 Page - Bourns Electronic Solutions |
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CD214B-F2100 Folha de dados(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214B-F250~F2600 Surface Mount Fast Response Rectifiers Features ■ Lead free as standard ■ RoHS compliant* ■ Glass passivated chip ■ Low reverse leakage current ■ Low forward voltage drop ■ High current capability General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Notes: 1 See Figure 1. 2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC. 3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas. The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Surface Mount Fast Response Rectifiers for rectification applications, in compact chip DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Fast Response Rectifier Diodes offer a forward current of 2.0 A with a choice of repetitive peak reverse voltages of 50 V up to 600 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Parameter Symbol CD214B-F250~F2600 Unit Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -55 to +150 °C Parameter Symbol CD214B- Unit F250 F2100 F2150 F2200 F2400 F2600 Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 400 600 V Max. Average Forward Rectified Current1 I(AV) 2.0 A DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 25 °C) IR 5.0 µA DC Reverse Current @ Rated DC Blocking Voltage (@TJ = 125 °C) IR 350 µA Typical Junction Capacitance2 CJ 200 pF Maximum Instantaneous Forward Voltage @ 1 A VF 0.92 1.25 1.30 V Typical Thermal Resistance3 RθJL 15 °C/W Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A |
Nº de peça semelhante - CD214B-F2100 |
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Descrição semelhante - CD214B-F2100 |
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