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BC369 Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BC369 Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 26 2 Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages. DESCRIPTION NPN medium power transistor in a TO-92; SOT54 plastic package. PNP complement: BC368. PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM285 2 1 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−32 V VCEO collector-emitter voltage open base −−20 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−1A ICM peak collector current −−2A IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Nº de peça semelhante - BC369 |
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Descrição semelhante - BC369 |
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