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BF1108 Folha de dados(PDF) 3 Page - NXP Semiconductors |
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BF1108 Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1999 Nov 18 3 Philips Semiconductors Product specification Silicon RF switches BF1108; BF1108R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Soldering point of FET gate and diode anode lead. STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT FET VDS drain-source voltage − 3V VSD source-drain voltage − 3V VDG drain-gate voltage − 7V VSG source-gate voltage − 7V ID drain current − 10 mA Diode VR continuous reverse voltage − 35 V IF continuous forward current − 100 mA FET and diode Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT FET V(BR)GSS gate-source breakdown voltage VDS = 0; IGS = 0.1 mA 7 −− V VGSoff gate-source pinch-off voltage VDS =1V; ID =20 µA −−3 −4V IDSX drain-source leakage current VGS = −5 V; VDS =2V −− 10 µA IGSS gate cut-off current VGS = −5 V; VDS =0 −− 100 nA RDSon drain-source on-state resistance VGS = 0; ID =1mA − 12 20 Ω Diode VF forward voltage IF =10mA −− 1V IR reverse current VR =25V −− 50 nA VR =20V; Tamb =75 °C −− 1 µA |
Nº de peça semelhante - BF1108 |
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Descrição semelhante - BF1108 |
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