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STP1N120 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STP1N120 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 10 page STP1N120 Electrical ratings 3/10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 1200 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 500 mA ID Drain current (continuous) at TC = 100°C 315 mA IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 2 A Derating factor 0.36 W/°C PTOT Total dissipation at TC = 25°C 45 W dv/dt (2) 2. ISD ≤1A, di/dt ≤200A/µs, VDD ≤960 Peak diode recovery voltage slope Tbd V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.78 °C/W Rthj-amb (1) 1. When mounted on 1inch² FR-4 board, 2 oz Cu Thermal resistance junction-amb max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) Tbd A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) Tbd mJ |
Nº de peça semelhante - STP1N120 |
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Descrição semelhante - STP1N120 |
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