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IRG4PC60F-PPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRG4PC60F-PPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 8 page Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 90 IC @ TC = 100°C Continuous Collector Current 60 A ICM Pulsed Collector Current 120 ILM Clamped Inductive Load Current 120 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 200 mJ PD @ TC = 25°C Maximum Power Dissipation 520 PD @ TC = 100°C Maximum Power Dissipation 210 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Maximum Reflow Temperature 230 (Time above 183°C should not exceed 100s) IRG4PC60F-PPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR E C G n-channel Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Solder plated version of industry standard TO-247AC package. Lead-Free Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified application conditions. Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. Designed for best performance when used with IR HEXFRED & IR FRED companion diodes. Benefits VCES=600V VCE(on)typ. = 1.50V @VGE = 15V, IC = 60A 07/15/04 Parameter Typ. Max. Units RθJC Junction-to-Case 0.24 RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient (Typical Socket Mount) 40 RθJA Junction-to-Ambient (PCB Mount, Steady State) 20 Wt Weight 6 (0.21) g (oz) Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 PD - 95567 TO-247AC °C |
Nº de peça semelhante - IRG4PC60F-PPBF |
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Descrição semelhante - IRG4PC60F-PPBF |
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